InAs quantum dot and nanowhisker formation by metalorganic chemical vapor deposition in porous materials

摘要

We report recent results of epitaxy of InAs quantum dots utilizing PSi and PSiC templates as nucleation sites. Spherical InAs quantum dots with a high planar density of 1.6/spl times/10/sup 9/ cm/sup -2/ were grown by metalorganic, chemical vapor deposition. By using a gold catalyst, InAs nanowhiskers are also formed from these dots.