Growth of GaN on a nanoscale-faceted Si substrate by metal-organic vapor-phase epitaxy

摘要

We demonstrate a surface morphology for growth of GaN on a Si(100) substrate by metal-organic vapor-phase epitaxy (MOVPE). The basic idea is to fabricate nanoscale periodic (111) facets on Si(100) and to restrict the initial nucleation to these (111) for better crystallinity.