Characterization of 1200 V trench IGBT using local lifetime control for clamped inductive load under extensive measurements without freewheeling diode reverse recovery influence

摘要

The characterization of 1200 V trench IGBT using local lifetime control for clamped inductive load is fully investigated with the help of extensive measurements under various test conditions. The Trench IGBT improves some features of the planar IGBT: higher current density and lower on-state voltage drop. Higher current density resulting in a smaller cell size improves the conduction. However, it results also in an increase of the excess charges, which can reduce the switching performances. In this study, the use of a specific test circuit allows the collector current waveforms of the device under test to be obtained without any freewheeling diode reverse recovery influence. Extensive measurements show that the studied device presents high turn-on losses due to its high input capacitance responsible for the convex shape of the collector current waveform. However, the merits of the trench IGBT come from its lower on-state and also turn-off losses than the conventional planar device. The local lifetime control using proton irradiation is more efficient than the uniform lifetime control used in the third generation of planar devices to improve the trade-off between the on-state voltage drop and the turn-off losses.