Young's modulus evaluation of Si thin film fabricated by compatible process with Si MEMSs

摘要

In this paper, in-situ evaluation of a Young's modulus for a polycrystalline Si (poly-Si) thin film on a PSG (Phosphorous doped silica glass) sacrifice layer is demonstrated based on the pull-in voltage of a cantilever, which is easily prepared during the MEMS's fabrication process.