Application of a production ready SiGe HBT process to 1.9, 5.7 and 10 GHz low noise MMICs

摘要

A commercially available SiGe HBT MMIC technology is used to realize low noise amplifiers covering a wide frequency band. Minimum noise figures of 1 dB, 1.6 dB and 3.3 d8 are observed in 1.9, 5.7 and 10 GHz LNAs, respectively. The gain of all amplifiers is in excess of 12 dB. The large signal performance is investigated by two-tone intercept point measurements, where the IIP3 was found to be better than -13 dBm in all amplifiers.