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Low pressure growth of diamond films under fluorine addition

机译:氟添加下金刚石薄膜的低压生长

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Phase diagrams in the C-H-F system for low pressure diamond growth have been calculated in the usual conditions: 0.1-6.67 kPa, 900-1100 K, and the agreements with experiments are good. A series of ternary phase diagrams imply that the suitable composition for low pressure diamond growth in C-H-F system is confined in the small CH/sub 4/-H-HF triangle. There is no diamond growth region while F/(F+H)<0.5, only a HF-CF/sub 4/ line appears. The diamond growth region changes greatly with substrate temperature and fluorine concentration.
机译:C-H-F系统中低压金刚石生长的相图是在通常的条件下计算得出的:0.1-6.67 kPa,900-1100 K,并且与实验的一致性很好。一系列三元相图暗示,在C-H-F系统中用于低压金刚石生长的合适成分被限制在小的CH / sub 4 / -H-HF三角形中。当F /(F + H)<0.5时,没有钻石生长区域,仅出现HF-CF / sub 4 /线。金刚石的生长区域随衬底温度和氟浓度的变化而变化很大。

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