Fabrication and performances of AlGaAs-GaAs wavelength distributed feedback lasers and distributed Bragg reflector lasers utilizing first-order diffraction grating formed by periodic groove structure

摘要

Distributed feedback (DFB) lasers and distributed Bragg reflector (DBR) lasers using a grooved grating structure with 1.50 nm period are demonstrated on an InGaAs-GaAs strained quantum well active wafer without a re-growth process. The lasers exhibit a sharply controlled spectra with threshold currents of 14 mA as low as those of conventional Fabry Perot type lasers.