The invention SG-DFB (Sampled Grating Distrituted Feedback) structure and the SG-DBR (Sampled Grating Distributed Bragg Reflector) to be integrated with the structure to a semiconductor laser configured to be capable of varying the wavelength , by changing the refractive index according to the phase control region and the SG-DBR structure portion of the current applied to the SG-DFB structure portion , continuously or discontinuously varying can be implemented to have a wavelength . The tunable semiconductor laser has a relatively simple structure and is composed of glass in production and mass production , while the output is possible wideband tunable optical efficiency has excellent effect .
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