Photonic Integrated Circuits based on Sampled-Grating Distributed- Bragg-Reflector Lasers

摘要

The Sampled-Grating Distributed-Bragg-Reflector laser (SGDBR) provides wide tunability (>40nm), and high output power (>10mW). Driven by the demand for network re-configurability and ease of implementation, the SGDBR has moved from the research lab to be commercially viable in the marketplace. The SGDBR is most often implemented using an offset-quantum well epitaxial structure in which the quantum wells are etched off in the passive sections. Alternatively, quantum well intermixing has been used recently to achieve the same goal - resulting in improved optical gain and the potential for multiple band-gaps along the device structure. These epitaxial 'platforms' provide the basis for more exotic opto-electronic device functionality exhibiting low chirp for digital applications and enhanced linearity for analog applications. This talk will cover state-of-the-art opto-electronic devices based on the SGDBR platform including: integrated Mach-Zehnder modulators, and integrated Electro-absorption modulators.