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High-power 1.625 /spl mu/m InGaAs/InGaAlAs Strained Multiple Quantum Well Lasers For Optical Time-domain Reflectometers

机译：用于光学时域反射仪的高功率1.625 / spl mu / m InGaAs / InGaAlAs应变多量子阱激光器

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《》|1997年|P.254-254|共1页
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Munakata; T.; Kashima; Y.;
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中图分类无线电电子学、电信技术;
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专利

1. High-power highly-reliable operation of 0.98-/spl mu/m InGaAs-InGaP strain-compensated single-quantum-well lasers with tensile-strained InGaAsP barriers [J] . Sagawa M., Toyonaka T. IEEE journal of selected topics in quantum electronics . 1995,第2期

机译：具有拉伸应变InGaAsP势垒的0.98- / splμm/ m InGaAs-InGaP应变补偿单量子阱激光器的高功率高可靠操作
2. High-power highly reliable 1.06 /spl mu/m InGaAs strained-quantum-well laser diodes by low-temperature growth of InGaAs well layers [MOVPE] [J] . Yuda M., Temmyo J., Sasaki T., Electronics Letters . 2003,第8期

机译：通过InGaAs阱层的低温生长获得高功率，高可靠性的1.06 / splμm/ m InGaAs应变量子阱激光二极管[MOVPE]
3. Degradation behavior of 0.98-/spl mu/m strained quantum well InGaAs/AlGaAs lasers under high-power operation [J] . Fukuda M., Okayasu M. IEEE Journal of Quantum Electronics . 1994,第2期

机译：0.98- / splμm/ m应变量子阱InGaAs / AlGaAs激光器在大功率工作下的降解行为
4. High-power 1.625 /spl mu/m InGaAs/InGaAlAs Strained Multiple Quantum Well Lasers For Optical Time-domain Reflectometers [C] . Munakata T., Kashima Y., Institute of Electric and Electronic Engineer Pacific Rim Conference on Lasers and Electro-Optics . 1997

机译：高功率1.625 / SPL MU / M INGAAS / INGAALAS应变多量子阱激光器，用于光学时域反射计
5. Optoelectronic devices based on low threshold strained InGaAs/GaAs quantum well lasers grown on structured substrates [D] . Frateschi, Newton Cesario 1993

机译：基于在结构化衬底上生长的低阈值应变InGaAs / GaAs量子阱激光器的光电器件
6. High-Power Growth-Robust InGaAs/InAlAs Terahertz QuantumCascade Lasers [O] . Christoph Deutsch, #, Martin Alexander Kainz, -1

机译：大功率生长健壮的InGaAs / InAlAs太赫兹量子级联激光器
7. Radiative and Auger Recombination in 1.3 mu m InGaAsP and 1.5 mu m InGaAs Quantum-well Lasers Measured Under High Pressure at Low and Room Temperatures [O] . Jin S R, Sweeney S J, Ahmad C N, 2004

机译：在低温和室温下高压下测量的1.3μmInGaAsP和1.5μmInGaAs量子阱激光器的辐射和俄歇复合
8. High-Power, High-Temperature Operation of AlInGaAs-AlGaAs Strained Single-Quantum-Well Diode Lasers [R] . Choi, H. K., Wang, C. A., Kolesar, D. F., 1991

机译：alInGaas-alGaas应变单量子阱二极管激光器的高功率，高温操作

High-power 1.625 /spl mu/m InGaAs/InGaAlAs Strained Multiple Quantum Well Lasers For Optical Time-domain Reflectometers

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