Behaviour of COPs (pits) on substrate surface during growth of thin epitaxial layer-condition of survival as pits on epi surface

摘要

Behaviour of COPs during epitaxial growth is investigated for two growth conditions. The critical thickness where COPs disappear depends on the growth conditions. In the case of atmospheric pressure epitaxy using SiHCl/sub 3/, the epitaxial thickness where COPs disappear is 0.4 /spl mu/m. In contrast COPs do not disappear up to 5 /spl mu/m in the case of reduced pressure epitaxy using SiH/sub 2/Cl/sub 2/. The shrink of COPs during epitaxial growth depends on the anisotropy of growth; they remain on the epitaxial layer surface when the growth condition is isotropic.