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Experimental investigation of the doping profile and structure of InGaAsP/InP multiple quantum wells after rapid thermal annealing

机译：快速热退火后InGaAsP / InP多量子阱的掺杂分布和结构的实验研究

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Abstract: The influence of rapid thermal annealing (RTA) on the doping profile and the structure of quantum well LD have been investigated by means of Hall measurement, Auger Electron Spectroscopy, and Secondary Ion Mass Spectroscopy methods after certain RTA. It has been discovered that high resistivity layer was formed at the ohmic contact layer after RTA. However, the structure of quantum well LD is not influenced by RTA. !539

机译：摘要：通过霍尔测量，俄歇电子能谱和二次离子质谱法研究了快速热退火（RTA）对掺杂分布和量子阱LD结构的影响。已经发现在RTA之后在欧姆接触层上形成高电阻率层。但是，量子阱LD的结构不受RTA的影响。！539

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《》|1996年|p.264-267|共4页
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Xuejin Yan; Institute of Semiconductors; Beijing; China; Ronghan Wu; Institute of Semiconductors; Beijing; China; Qiming Wang; Institute of Semiconductors; Beijing; China.;
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中图分类无线电电子学、电信技术;
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1. Effect of doping profile on the output power of broadly tuneable InGaAsP/InP asymmetric multiple quantum well lasers: finite element method simulations and experimental results [J] . Enshasy H.M., Cassidy D.T. Optoelectronics, IET . 2012,第1期

机译：掺杂分布对InGaAsP / InP非对称多量子阱激光器可调谐输出功率的影响：有限元方法模拟和实验结果
2. Enhancement of Crystalline Quality of Strained InAs/InP Quantum Well Structures by Rapid Thermal Annealing [J] . XING Q J, ZHANG B, WANG S M, Semiconductor photonics and technology . 1996,第2期

机译：快速热退火提高应变InAs / InP量子阱结构的晶体质量
3. Enhancement of Crystalline Quality of Strained InAs/InP Quantum Well Structures by Rapid Thermal Annealing [J] . 半导体光子学与技术（英文版） . 1996,第002期

机译：快速热退火提高应变InAs / InP量子阱结构的晶体质量
4. Experimental investigation of the doping profile and structure of InGaAsP/InP multiple quantum wells after rapid thermal annealing [C] . Xuejin Yan, Ronghan Wu, Qiming Wang Conference on semiconductor lasers . 1996

机译：快速热退火后InGaAsp / InP多量子孔掺杂曲线和结构的实验研究
5. Power and spectral characterization of InGaAsP-InP multi-quantum well lasers [D] . Prosyk, Kelvin. 1998

机译：InGaASP-INP多量子孔激光器的功率和光谱表征
6. Effect of Post Thermal Annealing on the Optical Properties of InP/ZnS Quantum Dot Films [O] . Bowen Zhang, Zhipeng Wei, Xinwei Wang, 2018

机译：后热退火对InP / ZnS量子点薄膜光学性能的影响
7. Investigation of Photoluminescence and Photocurrent in InGaAsP/InP Strained Multiple Quantum Well Heterostructures [O] . Alfano R. R., Wang W. B., Reynolds C. L. Jr., 1997

机译：InGaAsP / InP应变多量子阱异质结构中的光致发光和光电流研究
8. Investigation of Photoluminescence and Photocurrent in InGaAsP/InP Strained Multiple Quantum Well Heterostructures [R] . Raisky, O. Y. , Wang, W. B. , Alfano, R. R. , 1997

机译：InGaasp / Inp应变多量子阱异质结构中光致发光和光电流的研究

Experimental investigation of the doping profile and structure of InGaAsP/InP multiple quantum wells after rapid thermal annealing

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