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Effect of two types of surface sites on the characteristics of Si/sub 3/N/sub 4/-gate pH-ISFET's

机译:两种表面部位对Si / sub 3 / N / sub 4 /栅pH-ISFET的特性的影响

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Based on the site-binding model, the effects of two types of surface-sites (namely, silanol site and amine site) and their ratio on the characteristics of Si/sub 3/N/sub 4/-gate pH-ISFET are discussed. As the ratio /spl beta/ of silanol sites to amine sites is about 7/3, the maximum of the sensitivity of electrolyte-insulator (E-I) interfacial potential versus pH value, as well as of the range of linear response are theoretically obtained. The stability of pH-ISFET devices is partially determined by the total number of the two types of surface-sites and their ratio. The theoretical results are supported by experimental results.
机译:基于位点结合模型,讨论了两种表面位点(硅烷醇位点和胺位点)及其比例对Si / sub 3 / N / sub 4 /栅极pH-ISFET特性的影响。 。由于硅烷醇位点与胺位点的比率/ spl beta /约为7/3,因此理论上可获得电解质-绝缘体(E-1)界面电势相对于pH值的灵敏度的最大值以及线性响应范围。 pH-ISFET器件的稳定性部分取决于两种类型的表面位点的总数及其比例。理论结果得到实验结果的支持。

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