60-GHz monolithic oscillator using InGaP/InGaAs/GaAs HEMT technology

摘要

Using 0.11-/spl mu/m InGaP/InGaAs/GaAs pseudomorphic HEMT technology, we have developed a 60 GHz buffered free-running monolithic oscillator which has an output power of 9.1 dBm at 59.7 GHz and a phase noise of -60 dBc/Hz at 100 kHz from the carrier frequency. We operated the oscillator's HEMT in a reverse channel configuration and introduced an empirical nonlinear HEMT model for the configuration.