Hot-carrier induced trapped carriers and interface states in MOSFETs observed by gate-to-drain capacitance measurement

摘要

Hot carrier induced trapped carriers and interface states in n- and p-channel MOSFETs were studied using small signal gate-to-drain capacitance measurements. The results presented concentrate on the stress condition resulting in a high gate-to-drain transverse electric field. Under this condition the degradation of both n- and p-channel devices was found to be due to the trapping of majority carriers and generation of acceptor interface states in the upper half of the bandgap.