Silicon hybrid wafer scale integration (SHWSI)-a discrete integrated circuit (IC) interconnect scheme

摘要

Summary form only given. A silicon-hybrid wafer-scale integration (SHWSI) fabrication technology has been developed to interconnect discrete integrated circuit (IC) die. As a demonstration of this technology, a simple, 3-bit, asynchronous binary counter circuit was implemented using two discrete complementary metal-oxide semiconductor (CMOS) IC die that were independently fabricated by the Metal-Oxide-Semiconductor Implementation System (MOSIS) foundry. When compared to a complementary wire-bonded interconnect scheme, the SHWSI technology was found to manifest superior electrical performance at operating (clock) frequencies as high as 40 MHz.