Semi-empirical local NMOS mobility model for 2-D device simulation incorporating screened minority impurity scattering

摘要

Ionized impurity scattering in the inversion layer of submicrometer MOSFETs has become increasingly important due to the presence of large number of dopant atoms in the channel. Ionized impurity scattering of inversion-layer electrons treated under the Born approximation, which assumes an attractive potential, gives inaccurate results since inversion-layer electrons experience a repulsive potential. We present a new phenomenological yet highly accurate local low-field mobility model that incorporates screened minority impurity scattering and reproduces the generalized mobility curve.