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International workshop on numerical modeling of processes and devices for integrated circuits

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1.Analysis of amorphous-silicon devices

机译：非晶硅器件分析
- 作者：Valdinoci M.;Gnudi A.;Institute of Electric and Electronic Engineer
- 会议名称：《International workshop on numerical modeling of processes and devices for integrated circuits》 | 1994年
2.Grid evolution for oxidation simulation using a quadtree based grid generator

机译：基于四叉脂网格发生器的氧化仿真网格演化
- 作者：Sahul Z.H.;McKenna E.W.;Institute of Electric and Electronic Engineer
- 会议名称：《International workshop on numerical modeling of processes and devices for integrated circuits》 | 1994年
3.Simulation of interface state generation effects in LDD MOSFET's

机译：LDD MOSFET中界面状态生成效应的仿真
- 作者：Tahui Wang;Chimoon Huang;Institute of Electric and Electronic Engineer
- 会议名称：《International workshop on numerical modeling of processes and devices for integrated circuits》 | 1994年
4.A triangular mesh generation method suitable for the analysis of complex MOS device structures

机译：适用于复杂MOS装置结构分析的三角网格生成方法
- 作者：Kumashiro S.;Yokota I.;Institute of Electric and Electronic Engineer
- 会议名称：《International workshop on numerical modeling of processes and devices for integrated circuits》 | 1994年
5.A new scalar planewave model for high NA lithography simulations

机译：高NA光刻模拟的新标量飞机模型
- 作者：Qian Q.D.;Leon F.A.;Institute of Electric and Electronic Engineer
- 会议名称：《International workshop on numerical modeling of processes and devices for integrated circuits》 | 1994年
6.Architecture and implementation of 3D field support in semiconductor wafer representation

机译：半导体晶片表示中3D场支持的体系结构与实现
- 作者：Chung Yang;Giles M.D.;Institute of Electric and Electronic Engineer
- 会议名称：《International workshop on numerical modeling of processes and devices for integrated circuits》 | 1994年
7.A Galerkin method for the arbitrary order expansion in momentum space of the Boltzmann equation using spherical harmonics

机译：球形谐波玻尔兹曼方程动量空间中任意顺序扩展的Galerkin方法
- 作者：Rahmat K.;White J.;Institute of Electric and Electronic Engineer
- 会议名称：《International workshop on numerical modeling of processes and devices for integrated circuits》 | 1994年
8.A more efficient approach for Monte Carlo simulation of deeply-channeled implanted profiles in single-crystal silicon

机译：一种更有效的单晶硅涂层植入型材的蒙特卡罗模拟方法
- 作者：Yang S.-H.;Lim D.;Institute of Electric and Electronic Engineer
- 会议名称：《International workshop on numerical modeling of processes and devices for integrated circuits》 | 1994年
9.Automatic discretization and analytical Jacobian generation for device simulation using a physical-model description language

机译：使用物理模型描述语言自动离散化和用于设备仿真的分析雅可族织物
- 作者：Litsios J.;Fichtner W.;Institute of Electric and Electronic Engineer
- 会议名称：《International workshop on numerical modeling of processes and devices for integrated circuits》 | 1994年
10.A modified simulated diffusion algorithm for global optimization of model parameters

机译：一种修改模拟扩散算法，用于全局优化模型参数
- 作者：Moonho Kim;Deokro Yoon;Institute of Electric and Electronic Engineer
- 会议名称：《International workshop on numerical modeling of processes and devices for integrated circuits》 | 1994年
11.Two dimensional simulation of silicide growth and flow

机译：硅化物生长和流量的二维模拟
- 作者：Cea S.;Law M.E.;Institute of Electric and Electronic Engineer
- 会议名称：《International workshop on numerical modeling of processes and devices for integrated circuits》 | 1994年
12.Influence of heat flux on the accuracy of hydrodynamic models for ultra-short Si MOSFETs

机译：热通量对超短SI MOSFET流体动力学模型精度的影响
- 作者：Bork I.;Jungemann C.;Institute of Electric and Electronic Engineer
- 会议名称：《International workshop on numerical modeling of processes and devices for integrated circuits》 | 1994年
13.Semi-empirical local NMOS mobility model for 2-D device simulation incorporating screened minority impurity scattering

机译：用于2-D设备仿真的半经验局部NMOS移动模型，包括筛选的少数杂质散射
- 作者：Mujtaba S.A.;Dutton R.W.;Institute of Electric and Electronic Engineer
- 会议名称：《International workshop on numerical modeling of processes and devices for integrated circuits》 | 1994年
14.Proceedings of International Workshop on Numerical Modeling of processes and Devices for Integrated Circuits: NUPAD V

机译：关于集成电路流程和设备的数值模型的国际研讨会的载体：NUPAD V
- 作者：Institute of Electric and Electronic Engineer
- 会议名称：《International workshop on numerical modeling of processes and devices for integrated circuits》 | 1994年
15.Two-dimensional energy-dependent substrate current models for deep submicron MOSFETs

机译：深度亚微米MOSFET的二维能量依赖基板电流模型
- 作者：Yeap C.-F.;Hasnat K.;Institute of Electric and Electronic Engineer
- 会议名称：《International workshop on numerical modeling of processes and devices for integrated circuits》 | 1994年
16.Modeling of side wall passivation and ion saturation effects on etching profiles

机译：侧壁钝化和离子饱和效应的建模对蚀刻轮廓的影响
- 作者：Jie Zheng;McVittie J.P.;Institute of Electric and Electronic Engineer
- 会议名称：《International workshop on numerical modeling of processes and devices for integrated circuits》 | 1994年
17.Convergence properties of relaxation versus the surface-Newton generalized-conjugate residual algorithm for self-consistent electromechanical analysis of 3-D micro-electro-mechanical structures

机译：弛豫的收敛性能与表面牛顿广义共轭物残余算法，用于三维微电机械结构的自一致机电分析
- 作者：Yie H.;Cai X.;Institute of Electric and Electronic Engineer
- 会议名称：《International workshop on numerical modeling of processes and devices for integrated circuits》 | 1994年
18.Further improvements in decoupled methods for semiconductor device modeling

机译：用于半导体器件建模的去耦方法的进一步改进
- 作者：Obrecht M.S.;Heasell E.L.;Institute of Electric and Electronic Engineer
- 会议名称：《International workshop on numerical modeling of processes and devices for integrated circuits》 | 1994年
19.Non-Fickian microscopic diffusion at interfaces and in thin films

机译：界面和薄膜的非Fickian显微镜扩散
- 作者：Orlowski M.;Institute of Electric and Electronic Engineer
- 会议名称：《International workshop on numerical modeling of processes and devices for integrated circuits》 | 1994年
20.Phenomenological modeling of plasma generation for real-time control of RIE systems

机译：RIE系统实时控制等离子体生成的现象学建模
- 作者：Chandhok M.;Giles M.D.;Institute of Electric and Electronic Engineer
- 会议名称：《International workshop on numerical modeling of processes and devices for integrated circuits》 | 1994年
21.A method of heterojunction bipolar transistor high frequency performance calculation

机译：异结双极晶体管高频性能计算方法
- 作者：Khrenov G.;Ryzhii V.;Institute of Electric and Electronic Engineer
- 会议名称：《International workshop on numerical modeling of processes and devices for integrated circuits》 | 1994年
22.Analytical calculations of a figure of merit for novel MOSFET architecture for the sub 0.25 /spl mu/m range

机译：用于SUB 0.25 / SPL MU / M范围的新型MOSFET架构的优点图的分析计算
- 作者：Biesemans S.;Kubicek S.;Institute of Electric and Electronic Engineer
- 会议名称：《International workshop on numerical modeling of processes and devices for integrated circuits》 | 1994年
23.Mesh adaption and flux discretizations for dopant diffusion modeling

机译：用于掺杂剂扩散建模的网格适应和助焊剂离散化
- 作者：Chih-Chuan Lin;Law M.E.;Institute of Electric and Electronic Engineer
- 会议名称：《International workshop on numerical modeling of processes and devices for integrated circuits》 | 1994年
24.Monte Carlo modeling of infrared multiple-quantum-well phototransistor

机译：红外多量子孔光刻晶体管的蒙特卡罗建模
- 作者：Ryzhii V.;Ershov M.;Institute of Electric and Electronic Engineer
- 会议名称：《International workshop on numerical modeling of processes and devices for integrated circuits》 | 1994年
25.Algorithms for augmented device simulation models incorporating IV continuation and circuit element equations

机译：包含IV延续和电路元件方程的增强设备仿真模型的算法
- 作者：Coughran W.M. Jr.;Freund R.W.;Institute of Electric and Electronic Engineer
- 会议名称：《International workshop on numerical modeling of processes and devices for integrated circuits》 | 1994年
26.Computer-aided trade-off study of an integrated infrared sensor

机译：计算机辅助商品研究集成红外传感器
- 作者：Korvink J.G.;Lenggenhager R.;Institute of Electric and Electronic Engineer
- 会议名称：《International workshop on numerical modeling of processes and devices for integrated circuits》 | 1994年
27.Optimum scaling of non-symmetric Jacobian matrices for threshold pivoting preconditioners

机译：用于阈值枢转预处理器的非对称雅可比矩阵的最佳缩放
- 作者：Fischer C.;Selberherr S.;Institute of Electric and Electronic Engineer
- 会议名称：《International workshop on numerical modeling of processes and devices for integrated circuits》 | 1994年
28.Non-ideal contacts-Schottky diode soft-breakdown and hybrid diode with contact over pn-junction

机译：非理想的触点 - 肖特基二极管软击穿和混合二极管，与PN结接触
- 作者：Schroeder D.;Ostermann T.;Institute of Electric and Electronic Engineer
- 会议名称：《International workshop on numerical modeling of processes and devices for integrated circuits》 | 1994年
29.Transient impact ionization in bulk Si MOS devices

机译：散装Si MOS设备中的瞬态冲击电离
- 作者：Iizuka T.;Kato H.;Institute of Electric and Electronic Engineer
- 会议名称：《International workshop on numerical modeling of processes and devices for integrated circuits》 | 1994年
30.Incorporating full band-structure effects in the spherical harmonics expansion of the Boltzmann transport equation

机译：在Boltzmann运输方程的球面谐波扩展中采用全带结构效果
- 作者：Vecchi M.C.;Ventura D.;Institute of Electric and Electronic Engineer
- 会议名称：《International workshop on numerical modeling of processes and devices for integrated circuits》 | 1994年
31.Toward the automatic synthesis of process flows for semiconductor devices

机译：朝向半导体器件的自动合成过程流动
- 作者：Yuen R.W.;Gogoi B.;Institute of Electric and Electronic Engineer
- 会议名称：《International workshop on numerical modeling of processes and devices for integrated circuits》 | 1994年
32.Modeling of Ti physical vapor deposition systems

机译：Ti物理气相沉积系统的建模
- 作者：Bang D.S.;McVittie J.P.;Institute of Electric and Electronic Engineer
- 会议名称：《International workshop on numerical modeling of processes and devices for integrated circuits》 | 1994年
33.Numerical modelling of non-ideal current-voltage characteristics of high-efficiency silicon solar cells

机译：高效硅太阳能电池非理想电流电压特性的数值模型
- 作者：Heiser G.;Aberle A.G.;Institute of Electric and Electronic Engineer
- 会议名称：《International workshop on numerical modeling of processes and devices for integrated circuits》 | 1994年
34.Reliable solid modeling for three-dimensional semiconductor process and device simulation

机译：三维半导体工艺和器件仿真可靠的固体建模
- 作者：Westermann M.;Strecker N.;Institute of Electric and Electronic Engineer
- 会议名称：《International workshop on numerical modeling of processes and devices for integrated circuits》 | 1994年
35.Combined asperity contact and fluid flow model for chemical-mechanical polishing

机译：组合粗糙接触和流体流动模型进行化学机械抛光
- 作者：Tat-Kwan Yu;Yu C.;Institute of Electric and Electronic Engineer
- 会议名称：《International workshop on numerical modeling of processes and devices for integrated circuits》 | 1994年
36.Atomistic models of vacancy-mediated dopant diffusion in silicon at high doping levels

机译：高掺杂水平的硅中空位介导的掺杂剂扩散的原子
- 作者：Dunham S.T.;Can Dong Wu;Institute of Electric and Electronic Engineer
- 会议名称：《International workshop on numerical modeling of processes and devices for integrated circuits》 | 1994年
37.Simulation of amplified gate-induced-drain-leakage (GIDL) in short-channel SOI MOSFETs

机译：短通道SOI MOSFET中放大栅极诱导漏极泄漏（GID1）的仿真
- 作者：von Schwerin A.;Bergner W.;Institute of Electric and Electronic Engineer
- 会议名称：《International workshop on numerical modeling of processes and devices for integrated circuits》 | 1994年
38.Adaptive mesh generation in three dimensional device simulation

机译：三维设备仿真中的自适应网格生成
- 作者：Tanaka K.;Kato H.;Institute of Electric and Electronic Engineer
- 会议名称：《International workshop on numerical modeling of processes and devices for integrated circuits》 | 1994年
39.KYOKO: a new approach to couple 2D process and device simulation

机译：KYOKO：耦合2D流程和设备仿真的新方法
- 作者：Stecher M.;Engl W.L.;Institute of Electric and Electronic Engineer
- 会议名称：《International workshop on numerical modeling of processes and devices for integrated circuits》 | 1994年
40.CMOS-SRAM soft-error simulation system

机译：CMOS-SRAM软误差仿真系统
- 作者：Satoh S.;Sudo R.;Institute of Electric and Electronic Engineer
- 会议名称：《International workshop on numerical modeling of processes and devices for integrated circuits》 | 1994年
41.A new approach for 2-D mesh generation for complex device structures

机译：复杂设备结构的2-D网格生成一种新方法
- 作者：Garreton G.;Villablanca L.;Institute of Electric and Electronic Engineer
- 会议名称：《International workshop on numerical modeling of processes and devices for integrated circuits》 | 1994年
42.Polysilicon gate depletion effect on deep-submicron circuit performance

机译：深度亚微米电路性能的多晶硅栅极耗尽效应
- 作者：Lin W.W.;Chunlin Liang;Institute of Electric and Electronic Engineer
- 会议名称：《International workshop on numerical modeling of processes and devices for integrated circuits》 | 1994年
43.Automatic proximity correction for 0.35 /spl mu/m I-line photolithography

机译：0.35 / SPL MU / M I线光刻法自动接近校正
- 作者：Garofalo J.;Low K.K.;Institute of Electric and Electronic Engineer
- 会议名称：《International workshop on numerical modeling of processes and devices for integrated circuits》 | 1994年
44.Dynamic grain-growth and static clustering effects on dopant diffusion in polysilicon

机译：多晶硅掺杂剂扩散的动态晶粒生长和静态聚类效应
- 作者：Puchner H.;Selberherr S.;Institute of Electric and Electronic Engineer
- 会议名称：《International workshop on numerical modeling of processes and devices for integrated circuits》 | 1994年
45.Massively parallel device simulation using irregular grids

机译：使用不规则网格进行大规模并行器件仿真
- 作者：Sanghavi J.;Tomacruz E.;Institute of Electric and Electronic Engineer
- 会议名称：《International workshop on numerical modeling of processes and devices for integrated circuits》 | 1994年