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High performance MMICs in coplanar waveguide technology for commercial V-band and W-band applications

机译:共面波导技术中的高性能MMIC,适用于商用V波段和W波段应用

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We have designed and fabricated a family of coplanar MMICs based on a 0.16 /spl mu/m gate length pseudomorphic MODFET technology which cover the 63-64 GHz and 76-77 GHz frequency bands allocated for automotive applications in Europe. The realized circuits comprise a 3-stage low noise amplifier (LNA) with 21 dB gain and 6.2 dB noise figure at 77 GHz, a 2-stage medium power amplifier (MPA) with 28 mW saturated output power at 77 GHz and more than 9.5 dB gain from 70 to 80 GHz, a FET mixer working from 63 to 78 GHz with a conversion loss of 2.5 dB and a noise figure of 14 dB at 64 GHz, and an oscillator with 8 mW output power at 75 GHz.
机译:我们基于0.16 / spl mu / m栅极长度的伪变形MODFET技术设计和制造了一系列共面MMIC,该技术覆盖了欧洲分配给汽车应用的63-64 GHz和76-77 GHz频带。实现的电路包括一个在77 GHz时具有21 dB增益和6.2 dB噪声系数的3级低噪声放大器(LNA),在77 GHz时具有28 mW饱和输出功率的2级中功率放大器(MPA)从70到80 GHz的dB增益;在63到78 GHz的FET混频器工作;在64 GHz时,转换损耗为2.5 dB,噪声系数为14 dB;在75 GHz时,振荡器的输出功率为8 mW。

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