High-gain cascode MMICs in coplanar technology at W-band frequencies

摘要

Compact high-gain W-band multistage amplifier MMICs have been developed in coplanar technology using 0.15 /spl mu/m AlGaAs-InGaAs-GaAs PM-HEMTs. The conventional dual-gate HEMT has been modified to include an additional interstage network between the common-source and the common-gate HEMT. The effect of stabilizing circuit elements has been investigated. A gain of 10 dB per cascode stage is obtained at 94 GHz. Multistage amplifier MMIC's with up to 40 dB gain have been realized.