Real index guided AlGaInP visible laser with high bandgap energy AlInP current blocking layer grown by HCl-assisted metalorganic vapor phase epitaxy

摘要

Summary form only given. Selective growth of high bandgap energy AlInP layers were established by HCl-assisted MOVPE and applied to real index guided AlGaInP high power lasers for the first time. Reduction in threshold current and increase in slope efficiency were obtained. CW operation over 50 mW without any kinks was achieved.