Room temperature continuous wave operation of GaInP/AlInP visible-light laser with GaInP/AlInP superlattice confinement layer grown by gas source molecular beam epitaxy

摘要

A remarkable threshold current density reduction (from 3.5 kA/cm/sup 2/ to 1.6 kA/cm/sup 2/) of GaInP/AlInP visible light lasers grown by gas source molecular beam epitaxy (GS-MBE) was obtained by introducing 50 pairs of GaInP(7.1 AA)/AlInP(7.1 AA) short period superlattice confinement (SLC) layers. As a result, the room temperature continuous wave (CW) operation was obtained at 669 nm with a minimum threshold current of 50 mA and maximum light output of 10.5 mW.