Yellow light (576 nm) lasing emission of GaInP/AlInP multiple quantum well lasers prepared by gas-source-molecular-beam-epitaxy

摘要

GaInP/AlInP MQW short-wavelength lasers with AlInP cladding layers were fabricated using a gas source molecular beam epitaxy (GSMBE) for the first time. The film thickness of the GaInP wells and AlInP barriers were 3 and 2 nm, respectively. A yellow light lasing emission (576 nm) at 109 K was demonstrated by the MQW structure.