Ultranarrow trench-isolated 0.2-/spl mu/m CMOS and its application to ultralow-power frequency dividers

摘要

We applied shadow trench isolation to 0.2-/spl mu/m gate-length CMOS to fully utilize its low-power capability. With a proper design of device structure and dopant concentrations, the narrow-channel effect was not conspicuous down to the effective channel width of 0.1 /spl mu/m, and inter-device isolation was secured down to the coded isolation width of 0.28 /spl mu/m. Using the narrow-channel devices, a frequency divider circuit operating with a first-stage power dissipation of 12 fJ per clock has been fabricated.