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首页> 外文期刊>IEEE microwave and wireless components letters >A harmonic injection-locked frequency divider in 0.18-/spl mu/m SiGe BiCMOS
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A harmonic injection-locked frequency divider in 0.18-/spl mu/m SiGe BiCMOS

机译:0.18- / spl mu / m SiGe BiCMOS中的谐波注入锁定分频器

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A harmonic injection-locked frequency divider for high-speed applications is presented in this letter. In order to enhance the bandwidth of the high-order frequency division, a positive feedback is employed in the design of the subharmonic mixer loop. The proposed circuit is implemented in a 0.18-/spl mu/m SiGe BiCMOS process. With a singled-ended super-harmonic input injection of 0dBm, the frequency divider exhibits a locking range of 350MHz (from 59.77 to 60.12GHz) for the divide-by-four frequency division while maintaining an output power of -16.6/spl plusmn/ 0.5dBm within the entire frequency range. The frequency divider core consumes a dc power of 50mW from a 3.6-V supply voltage.
机译:这封信介绍了用于高速应用的谐波注入锁定分频器。为了提高高阶频分的带宽,在次谐波混频器环路的设计中采用了正反馈。所提出的电路以0.18- / splμm/ m的SiGe BiCMOS工艺实现。通过单端输入0dBm的超谐波输入,分频器的四分频显示锁定范围为350MHz(从59.77至60.12GHz),同时保持-16.6 / spl plusmn /的输出功率。在整个频率范围内为0.5dBm。分频器内核从3.6V电源电压消耗50mW的直流功率。

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