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Dislocation free gate process using in-situ doped polysilicon thin films by crystallization-induced stress of the films

机译：使用原位掺杂的多晶硅薄膜通过晶格诱导的应力进行位错自由栅极工艺

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《》|1993年|P.103-104|共2页
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Hashimoto; C.M.; Miura; H.; Asayama; K.;
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中图分类无线电电子学、电信技术;
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专利

1. Dislocation free gate process using in situ doped polysilicon thin films by crystallization-induced stress of the films [J] . Hashimoto C.M., Miura H. IEEE Transactions on Electron Devices . 1993,第11期

机译：使用原位掺杂的多晶硅薄膜通过晶格诱导的应力进行位错自由栅极工艺
2. Mechanical stress simulation during gate formation of MOS devices considering crystallization-induced stress of phosphorus-doped silicon thin films [J] . Hideo Miura, Naoto Saito, Noriaki Okamoto Microelectronics Journal . 1995,第2a3期

机译：考虑掺杂磷薄膜的晶化应力的MOS器件栅极形成过程中的机械应力模拟
3. In-situ phosphorous-doped VLPCVD polysilicon layers for polysilicon thin-film transistors [J] . Sarret M., Liba A. IEE proceedings. Part G . 1994,第1期

机译：用于多晶硅薄膜晶体管的原位掺杂磷的VLPCVD多晶硅层
4. Dislocation free gate process using in-situ doped polysilicon thin films by crystallization-induced stress of the films [C] . Hashimoto C.M., Miura H., Asayama K., Annual Device Research Conference . 1993

机译：使用原位掺杂多晶硅薄膜通过结晶诱导的薄膜的脱位自由栅极工艺
5. THE EFFECTS OF NONUNIFORMITY ON THE MODELING OF RESISTIVITY IN POLYCRYSTALLINE SILICON THIN FILMS (POLYSILICON, GRAIN BOUNDARY, DISTRIBUTION FUNCTION, DOPING PROFILE, TEM). [D] . KRULL, WADE ALLEN. 1985

机译：非均匀性对多晶硅硅薄膜（多晶硅，晶界，分布函数，掺杂曲线，TEM）中电阻率建模的影响。
6. In-Situ Testing of the Thermal Diffusivity of Polysilicon Thin Films [O] . Yi-Fan Gu, Zai-Fa Zhou, Chao Sun, 2016

机译：多晶硅薄膜热扩散率的原位测试
7. Thin film transistors fabricated by in-situ doped unhydrogenated polysilicon films obtained by solid phase crystallization [O] . Pichon, Laurent, Mourgues F. Raoult T. Mohammed-Brahim K. Kis-Sion D. Briand O. Bonnaud, K. 2001

机译：通过固相结晶获得的原位掺杂未氢化多晶硅薄膜制造的薄膜晶体管
8. In-Situ STM Studies of Strain Stabilized Thin Film Dislocation Networks UnderApplied Stress [R] . Schaff, O., Schmid, A. K., Bartelt, N. C., 2000

机译：应变下应变稳定薄膜位错网络的原位sTm研究

Dislocation free gate process using in-situ doped polysilicon thin films by crystallization-induced stress of the films

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