Ga/sub 1-x/In/sub x/P graded layers grown by isothermal liquid phase epitaxy on GaAs solar cells

摘要

The Ga/sub 1-x/Al/sub x/As windows, despite numerous advantages, have as a major drawback a low resistance to environmental effects, mostly to oxidation. An application of a coating to protect the surface from oxydation greatly complicates the technology and increases the cost of photovoltaic elements. An attempt to demonstrate the feasibility of using Ga/sub 1-x/In/sub x/P transition layers in constructing solar cells by means of the ILPE (isothermal liquid phase epitaxy) technique was undertaken. The effect of various factors on coupling of the Ga/sub 1-x/In/sub x/P/GaAs structure are analyzed.