Transconductor/multiplier circuits for gallium arsenide technology. I. Synthesis

摘要

A synthesis procedure for transconductor/multiplier circuits is developed. This procedure is based on the square-law Id versus Vgs characteristics of the GaAs MESFET. It is implemented by current differencing using source and sink current circuits preceded by voltage processing circuits using current mirror and source follower building blocks. The approach leads to considerable flexibility and is a powerful tool for the development of novel circuits.