Manufacturable millimeter-wave gallium arsenide MESFET integrated circuit technology.

摘要

This work will analyze the development of a GaAs MESFET-based IC process technology for LSI integrated circuits. It is the aim of this work to achieve a process technology capable of sustaining millimeter-wave LSI 0.25-0.10 {dollar}mu{dollar}m ion implanted GaAs MESFET coplanar waveguide integrated circuits. These devices are vital for the realization of viable consumer products in the hand-held personal communication market and other communication and commercial radar applications.; A detailed description of the process utilized for fabricating 0.25 {dollar}mu{dollar}m T-gate structures using electron-beam lithography is the focus of this work. The physical characteristics and electrical measurements which assist in the development and verification of this process technology are described in detail.; Speed, noise and gain measurements are reviewed for discrete and monolithic millimeter-wave and digital ICs. Future plans for low-noise 0.10 {dollar}mu{dollar}m T-gate FETs using ion-implantation and electron-beam lithography techniques are also discussed.