A novel CMOS-compatible lateral bipolar transistor for high-speed BiCMOS LSI

摘要

A CMOS-compatible lateral bipolar transistor suitable for low-cost and high-speed BiCMOS LSIs is proposed, and its high-speed characteristics are demonstrated. The proposed lateral bipolar transistor has a structure analogous to NMOS transistors, which use a source and drain self-aligned structure to form an emitter and collector. The obtained values of h/sub FE/, BV/sub CEO/, R/sub CS/, f/sub TMAX/, and r/sub bb/, are 20, 7 V, 50 Omega , 6.3 GHz, and 450 Omega , respectively. Moreover, delay times of a two-input NAND BiCMOS gate circuit are 0.28 ns when unloaded, and 0.42 ns and 0.53 ns when load capacitances are 1 pF and 2 pF, respectively. These values are equal to those of conventional poly-Si emitter bipolar transistors.