Evaluation of Surface Depletion Effects in Single-Crystal Test Structures for Reference materials Applications

摘要

Monocrystalline silicon test structures are being investigated for critical dimension reference materials application. The goal fo this work is to produce samples whihc do not exhibit the phenomenon of "methods divergence," where the masurement of a single sample, fabricated in an electrical conductor, by multiple techniques leads to results that differ from one another by more than the total known error budgets of the measurements. In this paper, measurements are described to determine the sources of differences observed between electrical and other measurements.