Planar SiC/Si heterostructures were formed by high dose carbon implantation using a metal vapor vacuum arc ion source. The variations of the field emissionproperties with the implant dose and annealing conditions wer studied. A remarkably low turn-on field of 1V/#mu#m was observed from a sample implanted at 35 keV to a dose of 1.0x10~(18) cm~(-2) with subsequent annealing in nitrogen at 1200 deg for 2h. The chemical composition depth profiles were determined from x-ray photoelectron spectroscopy and the surface morphology was observed by atomic force microscopy. The formation of a thin surface stoichiometric SiC layer and the formation of densely distributed small protrusions on the surface are believed to be the two facrtors responsible for the efficient electron field emission.
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