Effect of Pressure on Electronic Structure of Pb_(1-x)Sn_xTe Alloys Doped with Gallium

摘要

The galvanomagnetic effects in the n-Pb_(1-x)Sn_xTe:Ga (x=0.09-0.21) alloys at the temperatures 4.2 ≤ T ≤ 300 K and under hydrostatic compression up to 16 kbar have been investigated. It is shown that in all samples and in the whole investigated pressure range temperature dependencies of resistivity and Hall coefficient have a 'metallic' character, indicating stabilization of Fermi level by the impurity resonant level. Using the experimental data in the frame of two-band dispersion law the dependencies of the free electron concentration and the Fermi level position upon temperature, matrix composition and pressure were calculated. The temperature, composition and pressure coefficients of gallium resonant level movement were obtained and the electronic structure under varying the alloy composition and under pressure were built.