Properties of ultrathin gate oxides grown in N2O-based oxidation ambients by rapid thermal processing

机译：通过快速热处理在基于N2O的氧化环境中生长的超薄栅极氧化物的性质

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Abstract: Ultra-thin gate oxides grown by rapid thermal processing in N$-2$/O-based oxidation ambients were evaluated. Gate oxide integrity was improved by incorporating more nitrogen in the thin gate oxides and by diluting oxidation ambients in inert gases. !2

机译：摘要：评价了在N $ -2 $ / O基氧化环境中通过快速热处理生长的超薄栅氧化物。通过在薄的栅极氧化物中加入更多的氮，并通过稀释惰性气体中的氧化环境，可以改善栅极氧化物的完整性。！2

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《In-Line Methods and Monitors for Process and Yield Improvement》|1999年|p.112-115|共4页
会议地点 Santa Clarar CA(US)
作者
Y.B. Jia; Integrated Device Technology; Santa Clara; CA; USA; O.G. Pan; Integrated Device Technology; Santa Clara; CA; USA; Long-Ching Wang; Integrated Device Technology; Santa Clara; CA; USA; Patrick Lo; Integrated Device Technology; San Jose; CA; USA; S;
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入库时间 2022-08-26 13:47:45

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专利

1. Electrical and physical properties of ultrathin reoxidized nitrided oxides prepared by rapid thermal processing [J] . Hori T., Iwasaki H. IEEE Transactions on Electron Devices . 1989,第2期

机译：通过快速热处理制备的超薄再氧化氮氧化物的电学和物理性质
2. Excellent charge-trapping properties of ultrathin reoxidized nitrided oxides prepared by rapid thermal processing [J] . Hori T., Iwasaki H. IEEE Electron Device Letters . 1988,第4期

机译：通过快速热处理制备的超薄再氧化氮氧化物具有出色的电荷捕获性能
3. Optimisation of ac anodisation parameters for the improvement of electrical properties of thermally grown ultrathin gate oxide [J] . Binsu J. Kailath, Amitava DasGupta, Nandita DasGupta Solid-State Electronics . 2007,第5期

机译：优化交流阳极氧化参数以改善热生长超薄栅极氧化物的电性能
4. Properties of ultrathin gate oxides grown in N2O-based oxidation ambients by rapid thermal processing [C] . Y.B. Jia, O.G. Pan, Long-Ching Wang, Conference on in-line methods and monitors for process and yield improvement . 1999

机译：快速热处理在N2O基氧化氧化物中生长的超薄栅极氧化物的性质
5. Investigation of direct tunnel gate oxides fabricated by rapid thermal processing for metal oxide semiconductor field effect transistor applications. [D] . Henson, William Kirklen. 1998

机译：通过快速热处理制造的用于金属氧化物半导体场效应晶体管应用的直接隧道栅氧化物的研究。
6. Ultrathin transferred layers of thermally grown silicon dioxide as biofluid barriers for biointegrated flexible electronic systems [O] . Hui Fang, Jianing Zhao, Ki Jun Yu, 2016

机译：热生长二氧化硅的超薄转移层作为生物集成柔性电子系统的生物流体屏障
7. The Electrical Properties of Sub-5 nm Oxynitride Dielectrics Prepared in a Nitric Oxide Ambient Using Rapid Thermal Processing [O] . Dimitrijev Sima, T Yeow Y. 1994

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8. Interfacial and Breakdown Characteristics of MOS (Metal-Oxide-Semiconductor) Devices with Rapidly Grown Ultrathin SiO2 Gate Insulators. [R] . Moslehi, M. M., Shatas, S. C., Saraswat, K. C., 1987

机译：具有快速生长的超薄siO2栅极绝缘体的mOs（金属氧化物半导体）器件的界面和击穿特性。

Properties of ultrathin gate oxides grown in N2O-based oxidation ambients by rapid thermal processing

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