首页> 外文会议>In-Line Characterization Techniques for Performance and Yield Enhancement in Microelectronic Manufacturing II >Noncontact surface potential measurements for charging reduction during TEOS deposition and ion implantation
【24h】

Noncontact surface potential measurements for charging reduction during TEOS deposition and ion implantation

机译:非接触表面电势测量,可在TEOS沉积和离子注入过程中减少电荷

获取原文
获取原文并翻译 | 示例
获取外文期刊封面目录资料

摘要

Abstract: In this paper, we investigate the possibility of using non- contact surface potential measurements (SPM) to study charging during plasma enhanced CVD TEOS deposition and high current ion implantation. It is found that SPM can be used for a first order and fast-feedback assessment of new recipes and tools as well as for routine monitoring of plasma damaging processes. !11
机译:摘要:在本文中,我们研究了在等离子体增强CVD TEOS沉积和大电流离子注入过程中使用非接触表面电势测量(SPM)研究充电的可能性。发现SPM可用于新配方和工具的一阶和快速反馈评估以及血浆破坏过程的常规监控。 !11

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号