Surface Plasmon Dispersion Engineering via Double-Metallic Au / Ag Layers for Nitride Light-Emitting Diodes

机译：通过双金属Au / Ag层进行氮化物发光二极管的表面等离子弥散工程

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Propagation matrix method was used to calculate the surface plasmon dispersion for metal on top of InGaN / GaN quantum wells (QWs). Purcell enhancement factor related to the slope of the surface plasmon dispersion curve was calculated for metal on top of InGaN / GaN QWs. The use of double-metallic Au / Ag layers coupled to InGaN QWs results in wide-spectrum tuning of the Purcell peak enhancement of the spontaneous recombination rate for nitride light-emitting diodes.

机译：使用传播矩阵法计算InGaN / GaN量子阱（QW）上方金属的表面等离子体扩散。对于InGaN / GaN QWs顶部的金属，计算了与表面等离激元弥散曲线的斜率有关的赛尔增强因子。与InGaN QW耦合的双金属Au / Ag层的使用导致了Purcell峰的广谱调谐，从而增强了氮化物发光二极管的自发复合率。

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来源
《Light-emitting diodes: Materials, devices, and applications for solid state lighting XIV》|2010年|P.76170W.1-76170W.6|共6页
会议地点 San Francisco CA(US)
作者
Hongping Zhao; Guangyu Liu; Nelson Tansu;
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作者单位

Center for Optical Technologies, Department of Electrical and Computer Engineering, Lehigh University, Bethlehem, PA 18015, USA;

rnCenter for Optical Technologies, Department of Electrical and Computer Engineering, Lehigh University, Bethlehem, PA 18015, USA;

rnCenter for Optical Technologies, Department of Electrical and Computer Engineering, Lehigh University, Bethlehem, PA 18015, USA;

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原文格式 PDF
正文语种 eng
中图分类半导体二极管;
关键词
Ill-Nitride; InGaN QWs; light-emitting diodes; surface plasmon LEDs;

机译：氮化物; InGaN QW；发光二极管;表面等离激元LED;

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专利

1. Surface plasmon dispersion engineering via double-metallic Au/Ag layers for Ill-nitride based light-emitting diodes [J] . Hongping Zhao, Jing Zhang, Guangyu Liu, Applied Physics Letters . 2011,第15期

机译：基于双金属Au / Ag层的基于等离子氮化物的发光二极管的表面等离子体扩散工程
2. Localized Surface Plasmon-Enhanced Nitride-Based Light-Emitting Diode With Ag Nanotriangle Array by Nanosphere Lithography [J] . Kao C.C., Su Y.K., Lin C.L., Photonics Technology Letters, IEEE . 2010,第13期

机译：银纳米三角形阵列技术的局域表面等离子体增强氮化物基发光二极管的研究
3. Efficiency enhancement of fluorescence blue organic light-emitting diodes by incorporating Ag nanoparticles layers due to a localized surface plasmon [J] . Nam Minwoo, Chung Nak-Kwan, Shim Seob, Journal of the Korean Physical Society . 2017,第5期

机译：通过掺入由于局部表面等离子体引起的Ag纳米颗粒层掺入Ag纳米颗粒层的效率提高荧光蓝色有机发光二极管
4. Surface plasmon dispersion engineering via double-metallic Au / Ag layers for nitride light-emitting diodes [C] . Zhao Hongping, Zhang Jing, Liu Guangyu, 2011 Conference on lasers and electro-optics . 2011

机译：用于氮化物发光二极管的双金属Au / Ag层的表面等离子体扩散工程
5. Optically Functional Surfaces for High Light-Extraction and Control of the Pattern of Light Emission from Gallium Indium Nitride/Gallium Nitride Light-Emitting Diodes [D] . Noemaun, Ahmed Nayaz 2011

机译：光学功能性表面，用于高光提取和控制氮化镓铟/氮化镓发光二极管的发光模式
6. Enhanced performance of nitride-based ultraviolet vertical-injection light-emitting diodes by non-insulation current blocking layer and textured surface [O] . Yen Chih Chiang, Bing Cheng Lin, Kuo Ju Chen, 2014

机译：非绝缘电流阻挡层和带纹理的表面增强了氮化物基紫外垂直注入发光二极管的性能
7. Enhanced performance of nitride-based ultraviolet vertical-injection light-emitting diodes by non-insulation current blocking layer and textured surface [O] . Yen Chiang, Bing Lin, Kuo Chen, 2015

机译：非绝缘电流阻挡层和带纹理的表面增强了氮化物基紫外垂直注入发光二极管的性能

Surface Plasmon Dispersion Engineering via Double-Metallic Au / Ag Layers for Nitride Light-Emitting Diodes

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