Damage thresholds of HfO_2/SiO_2 and ZrO_2/SiO_2 high reflectors at 1.064 μm deposited by pulsed reactive DC magnetron sputtering

摘要

HfO_2/SiO_2 and ZrO_2/SiO_2 high reflectors at 1.064 μm were deposited by pulsed reactive DC magnetron sputtering. These dielectric thin film high reflectors were deposited with and without the use of an electron source. The electron source greatly decreased arcing of the magnetrons during the deposition process resulting in thin films with fewer defects. The high reflectors were laser damage tested at 1.064 μm. The optical properties of the thin film coatings were characterized prior to laser damage testing. Optical characterization techniques included angle resolved scatter (BRDF), total integrated scatter (TIS), and adiabatic calorimetry. The dependence of the laser damage threshold and optical properties on deposition conditions is reported.