Doping Profile Measurements in a 65-nm Commercial ProductUsing Atom Probe Tomography

摘要

Doping profile measurements in extremely small features likerntransistor gates or source/drain regions is a challenging taskrnfor the semiconductor industry. In our article, we successfullyrnused an atom probe tomography (APT) tool to measure therndoping concentration and profile of the dopant elements in arncommercial 65 nm product. APT not only delivers dopingrnconcentrations but also gives the highest spatial resolutionrn(sub-1 nm) three-dimensional compositional information ofrnany microscopy technique.