A New Kind of Technology for Post CMP Cleaning in IC Fabrication

摘要

In this paper the forming course and mechanisms of contaminations were systematically analyzed. A new mechanism model has been established about contaminations on wafer surface. According to this model a new kind of cleaning method was putted forward. Block copolymer is used as cleaning solution coordinated by infiltration and corrosive under megasonic. The new cleaning method has three advantages: First, the adsorptive state of particles on wafers is effectively controlled. The efficiency and effect of megasonic particle removal is greatly improved; Second, it has the functions of chelating and non-volatile organic base. It can remove many kinds of metal ions; Third, it can remove organic substance because of the same structure. This new cleaning method can remove particles, metal ions and organic substances together. Its cleaning effect is good without environment pollution. So the new leaning method can be used in commercial production safely.