Plasma processing: a novel method to reduce the transient enhanced diffusion of boron implanted in silicon

摘要

In this paper a novel method is presented, based on the use of plasma processing, to suppress the transient enhanced diffusion of boron implanted in silicon. We found for silicon samples processed with plasma and subsequently boron implanted that the anomalous diffusion of the dopant atoms at the beginning of the annealing process is almost completely supperssed. This phenomenon is interpreted in terms of capture of the ion beam generated interstitials by the dislocations induced by the plasma processing and the suppression of the suppression of the transient diffusion. direct c 1999 Elsevier Science B.V. All rights reserved.