首页> 外文会议>International Symposium on Ultra Clean Processing of Semiconductor Surfaces;UCPSS; 20060918-20;20060918-20; Antwerp(BE);Antwerp(BE) >Plastic containers contamination by volatile acids : accumulation, release and transfer to Cu-surfaces during wafers storage
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Plastic containers contamination by volatile acids : accumulation, release and transfer to Cu-surfaces during wafers storage

机译:挥发性酸对塑料容器的污染:在晶片存储过程中积累,释放并转移到铜表面

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摘要

This study addresses the problematic of volatile acids accumulation in plastic containers (i.e. FOUPs) and, their later release and transfer during wafers storage to sensitive layers as Cu-surfaces. Experiments have been carried out by the intentional contamination of a type of commercial FOUPs with HF, HCl or HBr. Results show the very great ability of plastic containers to trap these volatile contaminants and allow to rank HF as less absorbed than the 2 other gases. On the other hand, the storage of Cu-wafers inside contaminated containers have demonstrated the significant cross-contamination of volatile acids from the FOUP to Cu surfaces by molecular outgassing. Results have allowed to evaluate concentrations outgassed in the FOUP atmosphere as: HF > HCl > HBr. Thereby, F and Cl levels close to 1E+14 at/cm~2 have been fast reached highlighting the potential detrimental impacts which can occur on Cu-layers by a accumulation/release process of acids in FOUPs.
机译:这项研究解决了挥发性酸积聚在塑料容器(即FOUP)中的问题,以及它们在晶圆存储到敏感层(如Cu表面)期间后来释放和转移的问题。通过用HF,HCl或HBr故意污染一类商业FOUP进行了实验。结果表明,塑料容器具有很好的捕获这些挥发性污染物的能力,并使HF的吸收程度低于其他两种气体。另一方面,Cu晶片在受污染容器内的存储已证明,由于分子脱气,挥发性酸从FOUP到Cu表面有明显的交叉污染。结果允许评估在FOUP气氛中除气的浓度为:HF> HCl> HBr。因此,已快速达到接近1E + 14 at / cm〜2的F和Cl水平,突显了FOUP中酸的累积/释放过程可能对Cu层产生的潜在有害影响。

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