High Dose Implant Stripping and Residue Removal with Sequential Plasma and Vacuum Aerosol Processes

摘要

The NanoClean plasma and cryoaerosol process is the first all dry cleaning process than can remove the high dose implant crust, photoresist, and residues without the use of a liquid-based cleaning techniques. The residue is completely removed with the cryoaerosol process due to the conditioning of the photoresist with a unique plasma chemistry formulation that allows the clusters to be effectively removed. The NanoClean technology is targeted for 45 and 32-nm node requirements, achievable with the use of modern plasma reactors and the pulsed vacuum cryoaerosol cleaning.