Grafting FIB 'Lift-out' TEM Sample for Further Ion Milling and its application for Semiconductor Devices

摘要

A technique to "graft" a FIB lift-out TEM sample onto a scrapped wedge polished sample was introduced. In this way, the sample can be ion milled with lower accelerating voltage to avoid FIB caused problems. This technique does not require special attachment for the FIB. Improved imaging quality and potential applications are discussed.