The effects of process parameters on the properties of ITO films grown by ion beam-assisted deposition using 90In-10Sn (wt) alloy

摘要

ITO films have been grown by ion beam-assisted deposition (IBAD) using 90In-10Sn (wt%) alloy. The electrical and optical properties of these films have been investigated as a function of oxygen flux, evaporation rate, ion energy and substrate temperature during deposition. The films with resistivity as low as 2.4 × 10~(-3)Ω · cm (at room temperature) and 8 × 10~(-4)Ω·cm(at 150℃) have been deposited, and the transmittance of all samples in the visible range is above 82%. The deposited films at room temperature are polycrystalline with a preferred orientation of (222) and the size of crystal particle is about 21nm, and the surface roughness for the ITO films grown at room temperature is Ra=5.32nm.