首页> 外文会议>International Symposium on Oxide Films, May 15-18, 2000, Toronto, Ontario >CHLORIDE UPTAKE BY THE OXIDE FILMS ON SINGLE CRYSTAL AND POLYCRYSTALLINE ALUMINUM AS DETERMINED USING X-RAY ABSORPTON NEAR EDGE STRUCTURE
【24h】

CHLORIDE UPTAKE BY THE OXIDE FILMS ON SINGLE CRYSTAL AND POLYCRYSTALLINE ALUMINUM AS DETERMINED USING X-RAY ABSORPTON NEAR EDGE STRUCTURE

机译:X射线吸收近边缘结构测定单晶和多晶铝上氧化物膜上的氯化物吸收量

获取原文
获取原文并翻译 | 示例

摘要

Two distinct chloride (Cl~-) species were detected on/in the passive oxides of polycrystalline aluminum (Al) and an Al single crystal with a <110> orientation which were anodically polarized below the stable pitting potential in Cl~- containing solutions. Chloride was found to be present as an adsorbed species at the surface of the oxide, as well as an incorporated species within the oxide. The two species of Cl~- were recorded by X-ray absorption near edge structure (XANES) using an electron yield detector. Electron yield XANES results indicate that adsorbed Cl" migrates from the solution/Al oxide interface into the passive Al oxide film, prior to stable pit initiation. Also, anodic polarization of aluminum single crystals show that the critical potentials for the onset of stable pitting (E_(pit)) of Al were dependent on the crystallographic orientation of the electrode surface, where E_(pit <111>) < E_(pit <100>) < E_(pit <110>P.
机译:在多晶铝(Al)和具有<110>取向的Al单晶的钝态氧化物上/之中检测到两个不同的氯化物(Cl〜-)物种,它们在含Cl〜-的溶液中阳极极化低于稳定的点蚀电位。发现氯化物作为吸附物存在于氧化物的表面,以及在氧化物内的结合物。使用电子产率检测器通过近边缘结构(XANES)的X射线吸收来记录这两种Cl〜-。电子产率XANES结果表明,在稳定的凹坑引发之前,吸附的Cl“从溶液/氧化铝界面迁移到钝化的氧化铝膜中。而且,铝单晶的阳极极化表明,稳定凹坑开始的临界电势( Al的E_(坑)取决于电极表面的晶体学取向,其中E_(坑<111>) P)。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号