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DEPOSITION UNIFORMITY OF PULSED VACUUM ARC ION SOURCE

机译:脉冲真空弧离子源的沉积均匀性

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摘要

The principle and technical characteristics of pulsed vacuum arc ion source is introduced, and the diamond-like carbon (DLC) film is deposited with it. A lot of experiments are done with various technical parameters, including main loop voltage, pulse frequency, and substrate height, for finding out the action mechanism on film uniformity. A novel rotary holder was designed, using this holder, the deposition uniformity of pulsed vacuum arc ion source within the range of 160mm is achieved, and within this range, the film thickness relative error is less than ±3%.
机译:介绍了脉冲真空电弧离子源的原理和技术特性,并沉积了类金刚石碳(DLC)薄膜。针对主回路电压,脉冲频率和基板高度等各种技术参数进行了大量实验,以找出影响膜均匀性的作用机理。设计了一种新型的旋转支架,利用该支架,实现了脉冲真空电弧离子源在160mm范围内的沉积均匀性,在此范围内,膜厚相对误差小于±3%。

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