首页> 外文会议>International Symposium on Nitrides; 20060403-05; Eskisehir(TK) >The Growth and the Reaction Mechanism of Si_3N_4 Powder From Silica
【24h】

The Growth and the Reaction Mechanism of Si_3N_4 Powder From Silica

机译:二氧化硅中Si_3N_4的生长及其反应机理

获取原文
获取原文并翻译 | 示例

摘要

The behaviour of silica during the carbothermal reduction nitriding process at temperatures between 1300-1500℃ was studied by means of X-ray diffraction and scanning electron microscope analysis. The experimental runs were allowed to proceed up to 1 h in presence of nitrogen flow. The following mechanism of reduction nitriding of silica which was based on the experimental observation was proposed. Initially the impurity of the starting material is reduced before 1300℃. SiO_2 was reduced into SiO gas phase by active carbon and it was vaporised out of the mixture. The nucleation of α-Si_3N_4 was formed vapour-gas reaction took place and deposited on the surface of the mixture as well as around the reaction crucible. In the third stage, α-Si_3N_4 transforms to one dimensional direction which was β-Si_3N_4 particle. This was followed by the formation of SiC at temperature above 1450℃.
机译:通过X射线衍射和扫描电镜分析研究了碳热还原渗氮过程中硅在1300-1500℃之间的行为。在氮气流存在的情况下,允许实验运行长达1小时。根据实验观察结果,提出了以下氧化硅还原氮化的机理。最初,原料的杂质在1300℃之前被还原。 SiO_2被活性炭还原成SiO气相,并从混合物中蒸发出来。形成α-Si_3N_4的成核反应,发生蒸气-气体反应,并沉积在混合物表面以及反应坩埚周围。在第三阶段,α-Si_3N_4转变为一维方向,即β-Si_3N_4粒子。随后在1450℃以上的温度下形成SiC。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号