FLOW AND HEAT TRANSFER IN LEC GROWTH OF GALLIUM ARSENIDE

摘要

Numerical simulations for momentum and heat transfer for a 2 inch diameter LEC growth of single-crystal GaAs with an axial magnetic field was conducted using the finite-element method. Convective and conductive heat transfers, radiative heat transfer between diffuse surfaces and the Navier-Stokes equations for both melt and encapsulant and electric current stream function equations for melt and crystal are all combined and solved simultaneously. The effect of the thickness of encapsulant, the imposed magnetic field strength as well as the crystal rotation rate on the flow and heat transfer were investigated.