SINGLE-ELECTRON DETECTION AND MEMORY USING A SINGLE CARBON NANOTUBE DEFECT

摘要

A single scattering center in a p-type semiconducting carbon nanotube is used as a single-electron sensitive electrometer with charge noise <0.1 e/Hz~(1/2) at a temperature of 200 K. A single-electron memory is demonstrated using the nanotube electrometer as the readout device and a charge trap in the SiO_2 dielectric as the storage node. Controlled switching between discrete charge states corresponding to a difference of one electron at the storage node is detected by the electrometer as discrete current steps of more than 70 nA, with quantized threshold voltage shifts of ～200mV in the transistor transfer characteristics.