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ANALYSIS OF COPPER PLATING BATHS - SUPPRESSORS AND LEVELERS

机译:镀铜浴的压制和抑制分析

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摘要

New copper plating bath products are being introduced to meet the emerging needs of electroplating copper into sub-micron features on semiconductor wafers. The new products are designed to provide a fast, efficient, fill for even the most challenging wafer terrain. In a previously presented paper, the authors outlined a methodology to analyze these new baths for brightener type additives and their electrolysis by-products. It has been found that maintaining the concentration of these additives and by-products in the plating bath at certain levels is critical to the performance of the bath. This, however, is not the end of the story. In addition to brighteners, many acid copper plating baths also contain additives called "suppressors" and "levelers". It is theorized that the "suppressor" bath components help moderate the deposition rate of the copper fill and the "levelers" improve the topology of the copper overfill. Too much or loo little of these components in the bath can be detrimental to the quality of the copper deposition and may result in "fill failure" leading to a higher than necessary scrap rate for the wafers. This paper will cover the development of an analytical method using metal free liquid chromatography to quantitate the additive components and related electrolysis by-products found in a working copper plating bath.
机译:为了满足将铜电镀到半导体晶片上的亚微米特征的新兴需求,新的镀铜浴产品被引入。新产品旨在为即使是最具挑战性的晶圆地形提供快速,高效的填充。在先前发表的论文中,作者概述了分析这些新型镀液中光亮剂型添加剂及其电解副产物的方法。已经发现,将这些添加剂和副产物在电镀浴中的浓度保持在一定水平对于浴的性能至关重要。但是,这还不是故事的结局。除增白剂外,许多酸性铜电镀液还包含称为“抑制剂”和“整平剂”的添加剂。从理论上讲,“抑制剂”浴液成分有助于缓和铜填充物的沉积速率,而“整平剂”则可以改善铜填充物的拓扑结构。熔池中这些成分过多或不足可能会损害铜沉积的质量,并可能导致“填充失败”,从而导致晶圆的废品率高于必要的废品率。本文将介绍使用无金属液相色谱法定量分析在工作铜镀液中发现的添加剂成分和相关电解副产物的分析方法的发展。

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